IndiumV3, Main, Repository, bibRecord, 000613

Real-time study of Ga diffusion processes during the formation of Cu (In,Ga)Se2: The role of Cu and Na content

Identifieur interne : 000613 ( Main/Repository ); précédent : 000612; suivant : 000614

Real-time study of Ga diffusion processes during the formation of Cu (In,Ga)Se2: The role of Cu and Na content

Auteurs : RBID : Pascal:13-0239255

Descripteurs français

Pascal (Inist)
- Temps réel, Processus diffusion, Diffraction RX, Cellule solaire, Recuit, Traitement thermique, Empilement, Formation film, Diffusion mutuelle, Profil profondeur, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, Composé quaternaire, Cuivre, Molybdène, Verre, Chalcopyrite, Cu(In,Ga)Se2.
Wicri :
- concept : Cuivre, Molybdène, Verre.

English descriptors

KwdEn :
- Annealing, Chalcopyrite, Copper, Copper selenides, Depth profile, Diffusion process, Film formation, Gallium selenides, Glass, Heat treatment, Indium selenides, Interdiffusion, Molybdenum, Quaternary compound, Real time, Solar cell, Stacking, X ray diffraction.

Abstract

We study by means of real time X-ray diffraction the effect of the Cu and Na content on the diffusion of Ga during the formation of Cu(In,Ga)Se₂ films for solar cell applications. We analyze the diffraction data recorded during the annealing of stacks of different compositional ratios. A model for the film formation is suggested, which relies on two distinct steps: accumulation of Ga near the Mo back contact and In-Gainterdiffusion. The process of Ga-acumulation near the back contact is stronger for the films containing Na. The interdiffusion step starts at about 750 K and is strongest for films with low Na content. We observe that Cu-Se strongly enhances the interdiffusion when using a barrier to prevent Na diffusion from the glass substrate. Microstructural characterization of films with different copper content shows that the steepest Ga-depth-profiles are obtained for a [Cu]/([In]+[Ga]) ratio of about 1.

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Pascal:13-0239255

Le document en format XML

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<author><name sortKey="Abou Ras, D" uniqKey="Abou Ras D">D. Abou-Ras</name>
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<author><name sortKey="Klaus, M" uniqKey="Klaus M">M. Klaus</name>
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<author><name sortKey="Gledhill, S" uniqKey="Gledhill S">S. Gledhill</name>
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<author><name sortKey="Kaufmann, C A" uniqKey="Kaufmann C">C. A. Kaufmann</name>
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<author><name sortKey="Schock, H W" uniqKey="Schock H">H.-W. Schock</name>
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</titleStmt>
<publicationStmt><idno type="inist">13-0239255</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0239255 INIST</idno>
<idno type="RBID">Pascal:13-0239255</idno>
<idno type="wicri:Area/Main/Corpus">000A59</idno>
<idno type="wicri:Area/Main/Repository">000613</idno>
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<seriesStmt><idno type="ISSN">0927-0248</idno>
<title level="j" type="abbreviated">Sol. energy mater. sol. cells</title>
<title level="j" type="main">Solar energy materials and solar cells</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term>
<term>Chalcopyrite</term>
<term>Copper</term>
<term>Copper selenides</term>
<term>Depth profile</term>
<term>Diffusion process</term>
<term>Film formation</term>
<term>Gallium selenides</term>
<term>Glass</term>
<term>Heat treatment</term>
<term>Indium selenides</term>
<term>Interdiffusion</term>
<term>Molybdenum</term>
<term>Quaternary compound</term>
<term>Real time</term>
<term>Solar cell</term>
<term>Stacking</term>
<term>X ray diffraction</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Temps réel</term>
<term>Processus diffusion</term>
<term>Diffraction RX</term>
<term>Cellule solaire</term>
<term>Recuit</term>
<term>Traitement thermique</term>
<term>Empilement</term>
<term>Formation film</term>
<term>Diffusion mutuelle</term>
<term>Profil profondeur</term>
<term>Séléniure de cuivre</term>
<term>Séléniure de gallium</term>
<term>Séléniure d'indium</term>
<term>Composé quaternaire</term>
<term>Cuivre</term>
<term>Molybdène</term>
<term>Verre</term>
<term>Chalcopyrite</term>
<term>Cu(In,Ga)Se2</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term>
<term>Molybdène</term>
<term>Verre</term>
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<front><div type="abstract" xml:lang="en">We study by means of real time X-ray diffraction the effect of the Cu and Na content on the diffusion of Ga during the formation of Cu(In,Ga)Se<sub>2</sub>
 films for solar cell applications. We analyze the diffraction data recorded during the annealing of stacks of different compositional ratios. A model for the film formation is suggested, which relies on two distinct steps: accumulation of Ga near the Mo back contact and In-Gainterdiffusion. The process of Ga-acumulation near the back contact is stronger for the films containing Na. The interdiffusion step starts at about 750 K and is strongest for films with low Na content. We observe that Cu-Se strongly enhances the interdiffusion when using a barrier to prevent Na diffusion from the glass substrate. Microstructural characterization of films with different copper content shows that the steepest Ga-depth-profiles are obtained for a [Cu]/([In]+[Ga]) ratio of about 1.</div>
</front>
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: The role of Cu and Na content</s1>
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<sZ>1 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>We study by means of real time X-ray diffraction the effect of the Cu and Na content on the diffusion of Ga during the formation of Cu(In,Ga)Se<sub>2</sub>
 films for solar cell applications. We analyze the diffraction data recorded during the annealing of stacks of different compositional ratios. A model for the film formation is suggested, which relies on two distinct steps: accumulation of Ga near the Mo back contact and In-Gainterdiffusion. The process of Ga-acumulation near the back contact is stronger for the films containing Na. The interdiffusion step starts at about 750 K and is strongest for films with low Na content. We observe that Cu-Se strongly enhances the interdiffusion when using a barrier to prevent Na diffusion from the glass substrate. Microstructural characterization of films with different copper content shows that the steepest Ga-depth-profiles are obtained for a [Cu]/([In]+[Ga]) ratio of about 1.</s0>
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<s5>04</s5>
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<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Célula solar</s0>
<s5>04</s5>
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<fC03 i1="05" i2="X" l="FRE"><s0>Recuit</s0>
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<s5>08</s5>
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<s5>10</s5>
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<s2>NK</s2>
<s5>22</s5>
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<fC03 i1="11" i2="3" l="ENG"><s0>Copper selenides</s0>
<s2>NK</s2>
<s5>22</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Séléniure de gallium</s0>
<s2>NK</s2>
<s5>23</s5>
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<fC03 i1="12" i2="3" l="ENG"><s0>Gallium selenides</s0>
<s2>NK</s2>
<s5>23</s5>
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<fC03 i1="13" i2="3" l="FRE"><s0>Séléniure d'indium</s0>
<s2>NK</s2>
<s5>24</s5>
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<fC03 i1="13" i2="3" l="ENG"><s0>Indium selenides</s0>
<s2>NK</s2>
<s5>24</s5>
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<s5>26</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Copper</s0>
<s2>NC</s2>
<s5>26</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Cobre</s0>
<s2>NC</s2>
<s5>26</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Molybdène</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>27</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Molybdenum</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>27</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Molibdeno</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>27</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Verre</s0>
<s5>28</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Glass</s0>
<s5>28</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Vidrio</s0>
<s5>28</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Chalcopyrite</s0>
<s5>29</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Chalcopyrite</s0>
<s5>29</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Calcopirita</s0>
<s5>29</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Cu(In,Ga)Se2</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fN21><s1>224</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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   |texte=   Real-time study of Ga diffusion processes during the formation of Cu (In,Ga)Se2: The role of Cu and Na content
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Real-time study of Ga diffusion processes during the formation of Cu (In,Ga)Se2: The role of Cu and Na content

Real-time study of Ga diffusion processes during the formation of Cu (In,Ga)Se2: The role of Cu and Na content

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